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- W2170889660 abstract "High-quality Ge/Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.15</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.85</sub> multiple quantum wells have been grown by low-energy plasma-enhanced chemical vapor deposition. Structural and optical properties have been measured by X-ray diffraction, optical transmission, photoluminescence and photocurrent experiments." @default.
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- W2170889660 date "2008-09-01" @default.
- W2170889660 modified "2023-09-23" @default.
- W2170889660 title "Ge/SiGe multiple quantum wells for optical applications" @default.
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- W2170889660 doi "https://doi.org/10.1109/group4.2008.4638142" @default.
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