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• W2171186719 abstract "An experimental investigation of breakdown and defect generation under combined substrate hot-electron and tunneling electrical stress of silicon oxide ranging in thickness from 2.0 nm to 3.5 nm is reported. Using independent control of the gate current for a given substrate and gate bias, the time-to-breakdown of ultrathin silicon dioxide under substrate hot-electron stress is observed to be inversely proportional to the gate current density. The thickness dependence (2.0 nm to 3.5 nm) of substrate hot-electron reliability is reported and shown to be similar to constant voltage tunneling stress. The build-up of defects measured using stress-induced-leakage-current and charge-pumping for both tunneling and substrate hot-electron stress is reported. Based on these and previous results, a model is proposed to explain the time-to-breakdown behavior of ultrathin oxide under simultaneous tunneling and substrate hot-electron stress. The results and model provide a coherent understanding for describing the reliability of ultrathin SiO/sub 2/ under combined substrate hot-electron injection and constant voltage tunneling stress." @default.
• W2171186719 created "2016-06-24" @default.
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• W2171186719 date "2000-06-01" @default.
• W2171186719 modified "2023-10-12" @default.
• W2171186719 title "Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress" @default.
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• W2171186719 doi "https://doi.org/10.1109/16.842960" @default.
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