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• W2171204088 abstract "The microstructures of gas-pressure-sintered materials from β-Si3N4 powder were characterized in terms of the diameter and aspect ratio of the grains. The size distributions of diameters in materials fabricated by heating for 1 h at 1850° to 2000°C were nearly constant when they were normalized by average diameters because of normal grain growth. The rate-determining step in the densification and grain growth was expected to be the diffusion of materials through the liquid phase. The activation energy for grain growth was 372 kJ/mol. The average aspect ratio of the grains was 3 to 4, whereas that of large grains was smaller because of shape accommodation. The fracture toughness was about the same as that of material from α-Si3N4 powder despite the smaller aspect ratio of the grains" @default.
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• W2171204088 date "1990-08-01" @default.
• W2171204088 modified "2023-10-07" @default.
• W2171204088 title "Grain Growth During Gas-Pressure Sintering of beta-Silicon Nitride" @default.
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• W2171204088 doi "https://doi.org/10.1111/j.1151-2916.1990.tb07610.x" @default.
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