Matches in SemOpenAlex for { <https://semopenalex.org/work/W217125086> ?p ?o ?g. }
- W217125086 abstract "Publisher Summary The rapid progress that GaAs technology has made recently is primarily the result of the availability of round, high-purity substrates obtained from liquid encapsulated Czochralski grown boules. Active layers for most GaAs integrated-circuit applications are currently being formed by direct ion implantation. This chapter reviews GaAs materials preparation with focus on conductive layer formation by direct ion implantation. It discusses those aspects of materials preparation technology that impact ion implanted layer properties, for example, bulk crystal growth, compensation, ion-implanted impurity characteristics, and annealing techniques. The relationship between bulk crystal properties and the resulting ion implanted conductive layer properties are stressed. The chapter discusses characterization techniques that are particularly relevant to evaluation of GaAs substrates for ion implantation and for evaluation of ion implanted annealed layer properties." @default.
- W217125086 created "2016-06-24" @default.
- W217125086 creator A5034756053 @default.
- W217125086 creator A5073669918 @default.
- W217125086 date "1985-01-01" @default.
- W217125086 modified "2023-09-25" @default.
- W217125086 title "GaAs Material Preparation and Characterization" @default.
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