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• W2171453362 abstract "An interesting hydrogen sensor based on a Pt–oxide–Al0.3Ga0.7As MOS structure is fabricated and studied. The transient response and hydrogen detection sensitivity of the studied device under different hydrogen concentrations, temperature and applied voltages are measured. In addition, the kinetic and thermodynamic properties of hydrogen adsorption are studied and discussed. Experimentally, the studied device shows significant advantages of extremely low hydrogen concentration (15 ppm H2/air) detection capability, high hydrogen detection sensitivity (20 in 9090 ppm H2/air gas), short response time, wide temperature operating regime and good hydrogen detection ability under bi-directional applied bias. Based on these good properties, therefore, the studied device provides a promise for high-performance solid-state hydrogen sensor applications." @default.
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• W2171453362 date "2004-05-01" @default.
• W2171453362 modified "2023-10-17" @default.
• W2171453362 title "Hydrogen sensing characteristics of a Pt–oxide–Al0.3Ga0.7As MOS Schottky diode" @default.
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• W2171453362 doi "https://doi.org/10.1016/j.snb.2003.12.011" @default.
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