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- W2171504169 abstract "Vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) in 4H-SiC having both trench oxide protection and junction termination extension (JTE) are reported for the first time. Devices are fabricated with and without counter-doped channels. Blocking voltages and specific on-resistances are 3360 V and 199 m/spl Omega/-cm/sup 2/ for doped-channel FETs and 3055 V and 121 m/spl Omega/-cm/sup 2/ for FETs without doped channels. These blocking voltages are the highest reported to date for UMOSFETs in SiC." @default.
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- W2171504169 date "2002-06-01" @default.
- W2171504169 modified "2023-10-11" @default.
- W2171504169 title "High-voltage (3 kV) UMOSFETs in 4H-SiC" @default.
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- W2171504169 doi "https://doi.org/10.1109/ted.2002.1003714" @default.
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