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• W2171661694 abstract "In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and ramp-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a US J fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal." @default.
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• W2171661694 date "2008-05-01" @default.
• W2171661694 modified "2023-09-30" @default.
• W2171661694 title "Defect evolution and C⁺/F⁺ co-implantation in millisecond Flash annealed ultra-shallow junctions" @default.
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• W2171661694 doi "https://doi.org/10.1109/iwjt.2008.4540030" @default.
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