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• W2171843362 abstract "We report on a relatively simple and cost-effective method for fabrication of Silicon Nanowire Field-Effect Transistor (SiNW FET) arrays with three {100} surfaces via IC-compatible, top-down processes. Devices fabricated with this process offers an extra advantage compared to other top down fabrication techniques by not just only offering one or two, but instead three well-defined surfaces. The method offers a precise control of the NWs width (down to sub-100nm) without the need for nanolithography. In addition, very smooth and straight sidewalls are obtained. The process flow requires just one mask step and room-temperature, wet etching for the nanowire patterning and is thus suitable for wafer-scale fabrication of nanowires arrays. Device characterization includes electrical characterization and pH measurements were performed using the fabricated SiNW FET arrays." @default.
• W2171843362 created "2016-06-24" @default.
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• W2171843362 date "2011-06-01" @default.
• W2171843362 modified "2023-09-27" @default.
• W2171843362 title "IC compatible top down process for Silicon Nanowire fet arrays with three &#x007B;100&#x007D; surfaces for (BIO) chemical sensing" @default.
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• W2171843362 doi "https://doi.org/10.1109/transducers.2011.5969796" @default.
• W2171843362 hasPublicationYear "2011" @default.
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