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• W2171862007 abstract "This work presents a detailed study of data retention for nanocrystal Flash memories. Data retention has been investigated in memory cells, with tunnel oxide thickness ranging from 2.8 to 4 nm. Assuming direct tunneling through the tunnel oxide as the main charge loss mechanism for uncycled memories, we show that a minimum thickness around 4.2 nm is required for the tunnel oxide to guarantee 10 years of data storage. No measurable retention degradation is found up to at least 10/sup 6/ program/erase cycles, indicating that stress-induced leakage current (SILC) does not play a leading role in affecting the memory reliability. The SILC immunity of nanocrystal memories is explained by a physical model for charge leakage, accounting for lateral tunneling among the storage nodes." @default.
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• W2171862007 date "2003-12-22" @default.
• W2171862007 modified "2023-09-26" @default.
• W2171862007 title "Study of data retention for nanocrystal Flash memories" @default.
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• W2171862007 doi "https://doi.org/10.1109/relphy.2003.1197800" @default.
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