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• W2172008136 abstract "This paper overviews the fundamental problems encountered in device modeling and simulations of sub-10 nm Si metal-oxide-semiconductor field-effect-transistors (MOSFETs). We focus on the two fundamental problems: the quantum effects and the effects associated with the long-range Coulomb potential. It is pointed out that these problems are profoundly related to the basic principles of device physics and even pose a question on the validity of the basic transport equation which the present device simulations are based on. We also review various approaches and methods taken to tackle those problems." @default.
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• W2172008136 date "2002-03-01" @default.
• W2172008136 modified "2023-09-24" @default.
• W2172008136 title "Device modeling and simulations toward sub-10 nm semiconductor devices" @default.
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• W2172008136 doi "https://doi.org/10.1109/tnano.2002.1005427" @default.
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