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• W2173113980 abstract "Mg2Si1−xGex Solid Solution Semiconductors were prepared in the composition range 0.0≤x≤0.4. At a composition x=0.4, effects of impurities were investigated for dopants of Sb and Ag. Carrier concentrations were controlled up to 1.5×1026 electrons/m3 and 5.5×1025 holes/m3 by doping Sb and Ag, respectively. The thermal conductivity κ was measured at 300 K. By calculating the electronic thermal conductivity κel based on the Fermi integration, the lattice thermal conductivity κph was estimated to be 2.10 Wm−1 K−1. Figure-of-merits Z’s of Mg2Si0.6Ge0.4 at 300 K were 0.69×10−3 K−1 for the n-type sample with an electron concentration of 5.4×1025 m−3 (3000 ppmSb) and 0.47×10−3 K−1 for the p-type one with a hole concentration of 5.2×1025 m−3 (16000 ppmAg)." @default.
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• W2173113980 date "1992-01-01" @default.
• W2173113980 modified "2023-10-09" @default.
• W2173113980 title "Preparation and Thermoelectric Properties of Mg<SUB>2</SUB>Si<SUB>1&minus;<I>x</I></SUB>Ge<I><SUB>x</SUB></I> (<I>x</I>=0.0&sim;0.4) Solid Solution Semiconductors" @default.
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• W2173113980 doi "https://doi.org/10.2320/matertrans1989.33.845" @default.
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