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• W2174266544 abstract "We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six layered double-sided Si Strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 122 keV to 662 keV. The energy resolution is 9.1 keV and 14 keV at 356 keV and 511 keV, respectively." @default.
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• W2174266544 date "2005-10-01" @default.
• W2174266544 modified "2023-10-08" @default.
• W2174266544 title "A Si/CdTe semiconductor Compton camera" @default.
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• W2174266544 doi "https://doi.org/10.1109/tns.2005.856995" @default.
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