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• W2178441419 endingPage "92" @default.
• W2178441419 startingPage "88" @default.
• W2178441419 abstract "Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically-driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred MHz." @default.
• W2178441419 created "2016-06-24" @default.
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• W2178441419 date "2015-12-14" @default.
• W2178441419 modified "2023-10-13" @default.
• W2178441419 title "Electrical Control of <i>g</i>-Factor in a Few-Hole Silicon Nanowire MOSFET" @default.
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• W2178441419 doi "https://doi.org/10.1021/acs.nanolett.5b02920" @default.
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• W2178441419 hasPublicationYear "2015" @default.
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