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- W2180621494 abstract "Fe-Si (0∼16 wt% Si) and Fe-Si-Al (3∼14 wt% Si, 0∼8 wt% Al, bal Fe) alloy films have been prepared by DC sputtering technique. In Fe-Si films, the equilibrium phase expected from the phase diagram could be obtained under the sputtering condition (PAr=40 mTorr, VDC=3.5 kV), while under a different sputtering condition (PAr=40 mTorr, VDC=2.0 kV ), disordered α-phase as a non-equilibrium phase could be realized up to about 16 wt% Si. Concentration dependence of the magnetostriction, λ, for Fe-Si films sputtered under VDC=3.5 kV was found to be nearly the same as that of bulk crystals. However, for Fe-Si films consisting of the α-phase, the sign of λ remains positive up to about 16 wt% Si. Concentration dependence of zero magnetostriction, λ=0, determined for Fe-Si-Al films is found to be different from that of bulk crystals and also different from that of the evaporated films reported by Kadono et al.. Comparing the concentration dependence of λ with that of magnetocrystalline anisotropy constant, K1, determined by the present authors, it is proposed that the films with soft magnetic properties such as Sendust alloy be realized in the Fe-rich concentration portion." @default.
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- W2180621494 date "1986-01-01" @default.
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- W2180621494 title "Magnetic properties of Fe-Si-Al sputtered films." @default.
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- W2180621494 doi "https://doi.org/10.3379/jmsjmag.10.307" @default.
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