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- W2182193448 abstract "The present paper deals with the effect of a ‘Near-Surface’ Transition Layer (NSTL) on the growth of thin solid films. The growth kinetics of solid films is based on the well-documented phenomena of physisorption and chemisorption, as well as surface migration and particle clustering. In order to understand the effect of a NSTL on the growth kinetics, we applied an external magnetic field, polarized either vertically or horizontally to the growing surface, during the progression of cadmium sulfide films out of a chemical working solution. The CdS molecules or nanoclusters are formed by a controlled reaction in an aqueous solution. The incorporation mechanism of such neutral particles into the polymorphic CdS thin film is supposed by us to happen in a nanometer-wide transition layer via dissociation into charged constituents close to the growing interface. We found a clear effect of the external magnetic field, when the Lorentz force vector was acting parallel to the interface (the LORENTZ force is proportional to the velocity component vertical to the magnetic flux lines). Compared to the horizontal field orientation, where no effect was seen, the average grain size of the films is now reduced, the smoothness improved, and the layer thickness is increased by a factor of almost three. Band gap energy data from optical absorption measurements suggest dimorphism of the grown films, where the LORENTZ force within the NSTL turns the commonly cubic crystal modification (E= 2.38 eV) into a hexagonal polytype of a 200 meV larger energy band gap." @default.
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- W2182193448 date "2013-01-01" @default.
- W2182193448 modified "2023-09-26" @default.
- W2182193448 title "Impact of a magnetic field in a Near-Surface Transition Layer (NSTL) on the growth of thin semiconductor films" @default.
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