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• W2182393532 abstract "The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted." @default.
• W2182393532 created "2016-06-24" @default.
• W2182393532 creator A5013027572 @default.
• W2182393532 date "2016-01-01" @default.
• W2182393532 modified "2023-09-27" @default.
• W2182393532 title "Silicon Carbide Electronic Devices" @default.
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• W2182393532 doi "https://doi.org/10.1016/b978-0-12-803581-8.02051-8" @default.
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