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• W2182816104 abstract "Mi crohardness te sts and X-ray studi es performed on sin gle crystal s of pure Bi. Bi-Pb (3a t. %) and l3i-Ge (2a t. '!r,) in tri go nal directi on [1111 at room temperature re veal quite contra sting features for Pb and Ge as dopants. des pit e th e fa ct that both c f the se be long to gro up IV of peri odic table of elements. It is reported that Pb has a hard enin g effec t on th e bi smuth latti ce, whereas Ge has so ft enin g effect on bismuth lattice . Thi s resu lt may find man y metallu rgical and indu str ia l applications. The Vicker's hardness number in crea sed to a value of 13. 9 for Bi-Pb sys tem , whereas it dec reased to a va lu e or 11 .8 for Bi-G e system, co mpared to a va lue of 12 .4 for pure Bi . Mi cro hardness tests and X-ray studi es indicate Pb and Ge make predominantl y a so lid so luti on with bismuth by substitutin g for Bi atoms at variou s lattic e si tes wi th sma ll di sco ntinu oll s traces of seco nd phase sc att ered ove r a uniform main phase . In I3i -Pb system th is second phase is iden tiri edw be th e £ pha se comprising of Bi di sso lv ed in Pb and in Bi-Ge system the second phase is identified to be th e seg regatcd Ge. rej ec ted by th e Bi lattic e on account of limited so lubili ty of Ge in Bi. XRD pattern s reveal that th e lattice s of th e doped systei ll s are largely those of bismuth and vo lume fraction of seco nd phase is neg li gibly small in both th e systems. Cohen' s method of least squares refinement for cubic system is mod ifi ed for Bi latti ce, indexed on hexago nal axi s and a system or normal equ ati ons is set up for pure Bi and both the doped systems. Th ese equati ons are subj ected to leas t squares treatment to obtain lattice parameters, (/ and c, of pure Bi , Bi-Pb and Bi-Ge systems. It is reponed whil e th e unit c:: 11 o r pure l3i expand s, wh en Pb is add ed to it , it co ntrac ts when Ge is added to it. Laue back -reOec ti on photograph s tak en along trigo nal [III] di: 'e cti on show th at 3- fold sy mmetry of pure bi smuth lattice is retain ed aft er dopin g al so. The elec tronic configurati on and the band structure of Bi have been di sc ussed it~ detail in the literature t • 6 . Bi wo uld be an in sulator, but for the distortion from th e cubic lattice , wh ich causes the fifth Brillouin zone to overlap with the six th zone by approximately 36 MeV, thus spilling a very small number of electrons (3x I 0 17 fcm 3 ) into th e sixth zone and introducing equal number of holes into the fifth zone at low temperatures . The space lattice of Bi is of th e rhombohedral system with two atoms per unit cell. Th e point sy mmet ry group of Bi lattice is 93m (D 5 3d ) . Doping of Bi with elements of group III (In , TI) , group IV (Pb, Sn), group V (Sb), and group VI (Te) with requisite concentration of the dopant can bring about a significant change in the band structure of bismuth as refl ected in variou s electrical and thermal bahav iour of th e doped systems 7 .<J. Thi s behaviour is co nsequent on the change in the number of cond ucti on electro ns and on the chan ge in th e position of the Fermi sur face in the zone on account of doping. Uher & Opsal lo reported superconducting behaviour of Bi-Sn sys tem (conc. 0.02-0.23at. % Sn) below I K. Bi-Sb all oys also show interesting properti es, which vary significantly with composttt on. At lower concentration of Sb (5- 8.5%), it is se mi-metalli c. while at hi gher concentrations of Sb (-40%) it is . d . II P Ch I 11 I I" @default.
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• W2182816104 date "2003-01-01" @default.
• W2182816104 modified "2023-09-26" @default.
• W2182816104 title "Microhardness and X-ray studies of single crystals of Bi doped with group IV elements, Pb and Ge" @default.
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