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- W2183618750 abstract "2 Abstract - This paper systematically investigates the hot carrier (HC) and soft breakdown (SED) effects on different low noise amplifier (LNA) circuit configurations. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally evaluated, the HC and SBD induced performance degradations of three LNA configurations are evaluated for 0.16 pm CMOS technology, The applications include BlueTooth and WirelessLAN systems. The analytical equations for noise figure are derived, and the degradation models are also obtained. This work can help LNA designers to design more reliable LNA circuits." @default.
- W2183618750 created "2016-06-24" @default.
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- W2183618750 date "2005-01-01" @default.
- W2183618750 modified "2023-09-24" @default.
- W2183618750 title "Ana ysis and Modeling of LNA Circuit Reliabi" @default.
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- W2183618750 hasPublicationYear "2005" @default.
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