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• W2184032624 abstract "The use of Silicon Carbide in designing of power components made exceptional improvements by their high breakdown voltage in the off state, ultra-fast switching with a minimum loss during their turn-On and turn-Off transitions especially at high operating temperatures where silicon power devices reaching their limits of operations. This paper presents a comparative study, through numerical simulation using the finite element method, between a 4H-SiC power bipolar junction transistor and a Silicon power bipolar junction transistor having the same breakdown voltage, 3KV, to highlight the benefits of Silicon Carbide material in their designing." @default.
• W2184032624 created "2016-06-24" @default.
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• W2184032624 date "2015-03-01" @default.
• W2184032624 modified "2023-09-26" @default.
• W2184032624 title "The advantage of silicon carbide material in designing of power bipolar junction transistors" @default.
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• W2184032624 doi "https://doi.org/10.1109/ssd.2015.7348149" @default.
• W2184032624 hasPublicationYear "2015" @default.
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