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- W2184844823 abstract "Thin polysilicon layers have been recrystallized using an argon laser scanning system. Integrated absorbers have been used in order to achieve an entrainment of the grain boundaries. MOS transistors have been fabricated in such recrystallized films and characterized through electrical measurements." @default.
- W2184844823 created "2016-06-24" @default.
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- W2184844823 date "1989-01-01" @default.
- W2184844823 modified "2023-09-27" @default.
- W2184844823 title "Laser Recrystallization of Polysilicon for Improved Device Quality" @default.
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- W2184844823 doi "https://doi.org/10.1007/978-3-642-93413-1_39" @default.
- W2184844823 hasPublicationYear "1989" @default.
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