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- W2184957569 abstract "A new isolation technology, Buried Insulator between source / drain PolySilicon (BIPS) is described. The BIPS isolation structure consists of refilling CVD oxides in openings between source / drain polysilicon patterns by double photoresist etchback. A defect- and bird's beak-free process can be realized by this isolation. Devices with BIPS isolation are compared with LOCOS isolation for parasitic effects and current drive capability. 0.5 pm isolation is achieved, and the narrow channel effects are almost suppressed with BIPS isolation. The subthreshold characteristics of devices with BIPS isolation give the same slope value as that for conventional devices with LOCOS isolation. The ring oscillator with BIPS isolation exhibits a propagation delay time of 69 ps/gate." @default.
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- W2184957569 date "1988-12-01" @default.
- W2184957569 modified "2023-09-22" @default.
- W2184957569 title "Deep submicron device isolation with buried insulator between source/drain polysilicon (BIPS)" @default.
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