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- W2185065214 abstract "Photoassisted molecular beam epitaxy (PAMBE), in which the substrate is illuminated during film growth, is being employed in a new approach to controlled substitutional doping of II–VI compound semiconductors. Substitutional doping of these materials has been a long standing problem which has severely limited their applications potential. The PAMBE technique gives rise to dramatic changes in the electrical properties of as-grown epilayers. In particular, highly conducting n-type and p-type CdTe films have been grown using indium and antimony as n-type and p-type dopants, respectively. Double-crystal x-ray rocking curve data indicate that the doped epilayers are of high structural quality. Successful n-type doping of CdMnTe, a dilute magnetic semiconductor, with indium has also been achieved. Most recently, the photoassisted growth technique has been employed to prepare doped CdMnTe-CdTe quantum well structures and superlattices. In addition, HgCdTe films which exhibit excellent optical and electrical properties as well as exceptional structural perfection have been grown by the PAMBE technique." @default.
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- W2185065214 date "1989-01-01" @default.
- W2185065214 modified "2023-09-27" @default.
- W2185065214 title "Photoassisted Doping of II-VI Semiconductor Films" @default.
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- W2185065214 doi "https://doi.org/10.1007/978-1-4684-5661-5_13" @default.
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