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- W2185298340 abstract "Introduction For the surface analyses of various functional materials, it has become important to observe mesoscopic domains at microor nano-meter scale due to the rapid progress in nano-technology. Surface morphological and elemental mappings can be obtained by many kinds microscopic methods using focused electron beams. However a method for microscopic mapping dependent on the valence states has not been established. Photoelectron emission microscopy (PEEM) using synchrotron radiation is a powerful tool to identify electronic and magnetic structures at nanometer scale [1-3]. Here we report on the chemical-state mappings for silicon compounds using PEEM combined with soft X-ray excitation. The principle of the method is based on the fact that the binding energy of core electrons of an element varies with the chemical environment and chemical state by the surrounding atoms, which is called “chemical shift”. The PEEM images excited by various photon energies around the Si K-edge were observed for Si-SiO2 micro-pattern, and we have elucidated the valence states of silicon at nanometer scale." @default.
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- W2185298340 date "2007-01-01" @default.
- W2185298340 modified "2023-09-27" @default.
- W2185298340 title "Chemical-state mapping by photoelectron emission microscopy using soft X-rays" @default.
- W2185298340 hasPublicationYear "2007" @default.
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