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- W2185834036 abstract "Low temperature photoluminescence spectroscopy is used extensively to study the distribution of defects, concerning the type and impurity in a semiconductor film. Typical photoluminescence spectra are observed in a near band edge region. The undoped GaAs epitaxial layers grown by low pressure metal organic vapor phase epitaxy under different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. The V/III ratio has strong effect on the optical properties of undoped GaAs epitaxial layers. When the V/III ratio was varied from 45 to 87, the electron concentration, n, of undoped GaAs increased with increasing V/I11 ratio. Below the Vllll ratio of 45 in our case, the sample exhibited a p-type behavior, which has been identified by photoluminescence as well as depth profiling by Electro-chemical Capacitance Voltage (ECV) profiler. A. Introduction Metal Organic Vapor Phase Epitaxy (MOVPE) is well known for the growth of epitaxial GaAs, related 111-V compounds and their heterostructures. MOVPE lias been successfdly employed to grow high performance devices such as, lasers, solar cells, MESFETs, and QWs heterostructures, superlattices, HEMTs and other electronic and optoelectronic devices. Little understanding is evident in the literature to the effect of systematic variation of V/IJI ratio on the optical behavior in epi-GaAs film. Hence, present paper reports the results fiom tlie effect of VlIII ratio on the optical properties of undoped GaAs epitaxial layers by photoluminescence spectroscopy and determine a optimum V/III ratio for device quality epitaxial layers by MOVPE approach." @default.
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- W2185834036 date "1997-01-01" @default.
- W2185834036 modified "2023-09-24" @default.
- W2185834036 title "EFFECT OF VlIII RATIO ON THE OPTICAL PROPERTIES OF LPMOVPE GROWN IJNDOPED GaAs EPI-FILMS" @default.
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- W2185834036 hasPublicationYear "1997" @default.
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