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• W2186152023 abstract "Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to the unique material properties. With the continuing improvement in both material quality (defect density and carrier lifetime) and SiC device fabrication process, SiC power devices are increasingly fabricated with higher blocking rating and larger die size. This paper describes the benefits of using SiC Gate Turn-Off thyristors (GTO) in power electronics, especially for pulse power applications, reviews the development history and the current state of the art, and outlines the future perspective for developing large area GTOs with high blocking voltage of > 10 kV. Experimental results for the state-of-the-art 9 kV, 1" @default.
• W2186152023 created "2016-06-24" @default.
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• W2186152023 date "2009-01-01" @default.
• W2186152023 modified "2023-09-26" @default.
• W2186152023 title "1 cm SiC SUPER GTO TECHNOLOGY DEVELOPMENT FOR PULSE POWER" @default.
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• W2186152023 hasPublicationYear "2009" @default.
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