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• W2186341160 abstract "We investigate the physical parameters which are critical to the understanding of the thermal phenomena in InP- based heterojunction bipolar transistors. These parameters in- clude thermal resistance, thermal-electric feedback coefficient, current gain, and base-collector leakage current. We examine the thermal instability behavior in multi-finger HBT's, and observe for the first time the collapse of current gain in InP-based HBT's. Based on both measurement and modeling results, we establish the reasons why the collapse is rarely observed in InP HBT's, in a sharp contrast to AlGaAsIGaAs HBT's. We compare the similarities and differences on how InP-based HBT, GaAs-based HBT, and Si-based bipolar transistors react once the thermal instability condition is met. Finally, we describe the issues involved in the design of InP HBT's. nP-BASED heterojunction bipolar transistors (HBT's) are developed for microwave and digital applications because InP and InGaAs lattice-matched to InP substrate have unique material properties which enable better device performances than in GaAs-based HBT's (I), (Z). To date, InPfinGaAs double heterojunction bipolar transistors (DHBT's) with a cutoff frequency (f~) of 160 GHz and a maximum oscillation frequency ( fmax) of 267 GHz were fabricated. Large-signal power of 1 W and power-added efficiency of 60% were demonstrated at X-band. In this investigation, we study the thermal properties of InP-based DHBT's and examine their characteristics during thermal instability. Emphasis is placed on describing how and why these transistor characteristics differ from those of GaAs-based HBT's and Si bipolar junction transistors (BJT's). In Section 11, we report the experimental results of the current dependence of the thermal-electric feed- back coefficient ( 31; the nonlinear variation of junction tem- perature on power dissipation; the current gain as a function of current at various temperatures; the exponential dependence of the base-collector leakage current on temperature; and the dependence of collector current ideality factor on temperature. In Section 111, we present the current-voltage (I-V) character- istics when a 2-finger InP DHBT enters thermal instability. We qualitatively explain the reasons why the collapse of current gain, commonly observed in AlGaAs/GaAs HBT's (3), (4), occurs only at high current levels, and why the instability- induced second breakdown, commonly observed in Si BJT's (SI, occurs only at high biases in InP DHBT's. In Section IV, a" @default.
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• W2186341160 date "1996-01-01" @default.
• W2186341160 modified "2023-09-27" @default.
• W2186341160 title "a1 Properties and Thermal nstabilities o ased Heterojunction Bipolar Transistors" @default.
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