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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2186372991> ?p ?o ?g. }

• W2186372991 abstract "m displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current‐voltage (I‐V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of m devices yielded unity current gain ( ) and unilateral power gain ( ) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of m devices revealed minimum noise figure ( ) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz." @default.
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• W2186372991 date "2001-01-01" @default.
• W2186372991 modified "2023-09-26" @default.
• W2186372991 title "SiGe pMODFETs on Silicon-on-Sapphire Substrates" @default.
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• W2186372991 hasPublicationYear "2001" @default.
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