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- W2186385275 abstract "With increasing chip size and complexity, interconnect delays are becoming limiting factors in increasing performance. 3-D device integration will result in a reduction in chip size and interconnect delay. We present a novel technique for achieving high-performance MOS devices for vertical integration. Poly-Ge is used as a seeding agent to laterally crystallize amorphous Si films into the channel of poly-TFTs, resulting in a substantial performance improvement through a simple, CMOS-compatible process. The technology is scaleable, and should enable near-single crystal performance in deep sub-micron devices." @default.
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- W2186385275 date "1997-01-01" @default.
- W2186385275 modified "2023-09-26" @default.
- W2186385275 title "A Novel Techni Integration: Ge-seeded Laterally Crysta~~~~e" @default.
- W2186385275 hasPublicationYear "1997" @default.
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