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- W2186407560 abstract "The electrical, optical and spectral responses of optically transparent emitter InP/InGaAs heterojunction phototransistors (HPTs) fabricated using Indium Tin Oxide (ITO) are presented. These HPTs showed significantly increased optical responsivities while the electrical characteristics were similar to their respective opaque counterparts. Responsivities of 28A/W at 1310nm for the InPhGaAs HPTs were obtained. The spectral responses of these phototransistors were simulated and compared with the measured results and good correlation between the experiments and the theoretical models were obtained. Introduction : There has been renewed interest in the usage of phototransistors as detectors in OEICa, particularly in heterojunction phototransistors ( 1,2). HBTs fabricated using the InPhnGaAs material system has numerous advantages over its AlGaAdGaAs counterpart; as well as their -suitability for usage with long haul optical fiber telecommunications systems as near infra red detectors, we have shown that the InPhGaAs HBTs exhibit a lower turn on voltage (0.1 - 0.2V) than the GaAs-based HBTs (= 0.7V) (3) making them an ideal candidate for low power circuit applications such as mobile telecommunications. The coupling efficiency of a heterojunction phototransistor, HPT, can be significantly improved by using a transparent emitter contact thereby raising the -overall gain-bandwidth of the device correspondingly. We have successfully fabricated InPhGaAs HPTs using transparent Indium Tin Oxide (EO). The electrical, optical and spectral responses of these devices were measured and compared to their opaque counterparts. The transparent devices showed significantly increased optical responsivities while their electrical characteristics were 3imilar to the opaque devices. The spectral responses of these phototransistors were simulated and compared with the measured results. Good correlation between the experiments and the theoretical models were obtained." @default.
- W2186407560 created "2016-06-24" @default.
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- W2186407560 date "1995-01-01" @default.
- W2186407560 modified "2023-09-27" @default.
- W2186407560 title "Characterisation of Transparent IT0 Emitter Contact InPhGaAs Heterojunction Phototransistors" @default.
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