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- W2186565963 abstract "The excess electron barrier height at high current densities is examined. The barrier effects on the collector current, transconductance as well as base-collector junction capacitance are calculated. The analyt~cal results are compared with the experimental data and device simulation results. Temperature-dependent characteristics are also evaluated. When double heterojunction bipolar transistors are operating at high collector current densities, an excess electron barrier (AEc) will occur due to the base-collector valanceband offset which prevents holes from flowing into the collector. This barrier will lead to an increase in minority-carrier charge storage in the base and a decrease in current gain of the device . This effect appears at the current density lower than the onset current density of kirk effect as demonstrated by experimental data and simulation results [ 11. The barrier effect is enhanced at lower temperatures as seen in measured transconductance [2] [3]. Mazhari and Morkoc modeled this barrier height and its effect on the collector current gain assuming that kirk effect has occurred. They also assumed a constant valence band offset AEv in their analysis. In fact, the formation of the electron barrier also results in a reduction of the hole barrier from AEv to AEv-AEc. In this paper, we develop a new model of the electron barrier height to predict the collector current density, transconductance, and base-collector capacitance before and after collector-base barrier effect. The analytical results are compared with experimental data and the device simulation to verify the model accuracy." @default.
- W2186565963 created "2016-06-24" @default.
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- W2186565963 date "1998-01-01" @default.
- W2186565963 modified "2023-09-26" @default.
- W2186565963 title "Base-Collector Heterojunction Barrier Effects at Current densities of Si/SiGe/Si Heterojuncti Transis tors" @default.
- W2186565963 hasPublicationYear "1998" @default.
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