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• W2186582149 abstract "This paper presents a novel nonvolatile poly-Si- oxide-nitride-oxide-silicon-type Flash memory that was fabri- cated using hafnium oxide (HfO2) nanocrystals as the trapping storage layer. The formation of HfO2 nanocrystals was confirmed using a number of physical analytical techniques, including ener- gy-dispersive spectroscopy and X-ray photoelectron spectroscopy. These newly developed HfO2 nanocrystal memory cells exhibit very little lateral or vertical stored charge migration after 10 k program/erase (P/E) cycles. According to the temperature-acti- vated Arrhenius model, we estimate that the activation energy lies within the range 2.1-3.3 eV. These HfO2 nanocrystal memories exhibit excellent data retention, endurance, and good reliability, even for the cells subjected to 10 k P/E cycles. These features suggest that such cells are very useful for high-density two-bit nonvolatile Flash memory applications. Index Terms—Flash memory, hafnium oxide (HfO2), nanocrys- tals, nonvolatile memories." @default.
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• W2186582149 date "2006-01-01" @default.
• W2186582149 modified "2023-10-18" @default.
• W2186582149 title "Novel Two-Bit HfO 2 Nanocrystal Nonvolatile" @default.
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