FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2186596722> ?p ?o ?g. }

• W2186596722 endingPage "854" @default.
• W2186596722 startingPage "795" @default.
• W2186596722 abstract "In this chapter, the performance of several drying techniques commonly used in the semiconductor manufacturing industry is evaluated. This is done by measuring the residues on a wafer onto which a solution containing metal salts acting as tracer elements has been dispensed and dried. To correctly interpret the experimental data, the results are compared with predictions from a theoretical model. This model assumes two distinct mechanisms for deposition: adsorption and evaporative deposition. The first mechanism is a result of attractive interactions between the contaminant and the wafer surface, while the second mechanism is due to liquid evaporation during drying. For the latter case, the evaporated film thickness is introduced as a figure of merit for the drying process under study. In the tests, spin drying was compared with two types of Marangoni based drying: on a vertically moving wafer and on a horizontally rotating wafer. The results show that for spin drying two consecutive phases occur: during the first seconds of spinning convective removal of liquid is the dominant mechanism, followed by a phase where evaporation takes over. This behavior is confirmed by models reported in the literature describing photo-resist coating. The amount of liquid evaporating during spin drying is inversely proportional to the square root of the rotation speed. This suggests that entrainment of liquid by the gas flow over the wafer surface is the dominant mechanism for evaporation. This finding is in agreement with fluid dynamics models describing the flow of gas entrained with a rotating substrate." @default.
• W2186596722 created "2016-06-24" @default.
• W2186596722 creator A5009084424 @default.
• W2186596722 creator A5029757311 @default.
• W2186596722 creator A5033966941 @default.
• W2186596722 creator A5056576628 @default.
• W2186596722 creator A5061145610 @default.
• W2186596722 creator A5066530245 @default.
• W2186596722 creator A5070034004 @default.
• W2186596722 creator A5085185765 @default.
• W2186596722 date "2008-01-01" @default.
• W2186596722 modified "2023-10-18" @default.
• W2186596722 title "A Detailed Study of Semiconductor Wafer Drying" @default.
• W2186596722 cites W1480410166 @default.
• W2186596722 cites W1964347147 @default.
• W2186596722 cites W1964753895 @default.
• W2186596722 cites W1965552641 @default.
• W2186596722 cites W1973151571 @default.
• W2186596722 cites W1974411134 @default.
• W2186596722 cites W1981839887 @default.
• W2186596722 cites W1993743842 @default.
• W2186596722 cites W1997442647 @default.
• W2186596722 cites W2000463323 @default.
• W2186596722 cites W2005799405 @default.
• W2186596722 cites W2005929090 @default.
• W2186596722 cites W2010486977 @default.
• W2186596722 cites W2011059366 @default.
• W2186596722 cites W2016131685 @default.
• W2186596722 cites W2016615534 @default.
• W2186596722 cites W2018795861 @default.
• W2186596722 cites W2020667392 @default.
• W2186596722 cites W2025064062 @default.
• W2186596722 cites W2025579126 @default.
• W2186596722 cites W2025631149 @default.
• W2186596722 cites W2025967154 @default.
• W2186596722 cites W2030217137 @default.
• W2186596722 cites W2034142156 @default.
• W2186596722 cites W2035020668 @default.
• W2186596722 cites W2037127605 @default.
• W2186596722 cites W2044303257 @default.
• W2186596722 cites W2052625099 @default.
• W2186596722 cites W2054142539 @default.
• W2186596722 cites W2055007828 @default.
• W2186596722 cites W2055753051 @default.
• W2186596722 cites W2057791345 @default.
• W2186596722 cites W2058098574 @default.
• W2186596722 cites W2058472371 @default.
• W2186596722 cites W2058833705 @default.
• W2186596722 cites W2066294614 @default.
• W2186596722 cites W2066474456 @default.
• W2186596722 cites W2067424902 @default.
• W2186596722 cites W2068000554 @default.
• W2186596722 cites W2068719620 @default.
• W2186596722 cites W2069836423 @default.
• W2186596722 cites W2072767215 @default.
• W2186596722 cites W2072794077 @default.
• W2186596722 cites W2076429670 @default.
• W2186596722 cites W2080871339 @default.
• W2186596722 cites W2083763784 @default.
• W2186596722 cites W2087321128 @default.
• W2186596722 cites W2090955920 @default.
• W2186596722 cites W2092450167 @default.
• W2186596722 cites W2098939572 @default.
• W2186596722 cites W2101131261 @default.
• W2186596722 cites W2125692555 @default.
• W2186596722 cites W2146400069 @default.
• W2186596722 cites W2146920398 @default.
• W2186596722 cites W2151928328 @default.
• W2186596722 cites W2160454981 @default.
• W2186596722 cites W2168889067 @default.
• W2186596722 doi "https://doi.org/10.1016/b978-0-323-29960-2.00019-8" @default.
• W2186596722 hasPublicationYear "2008" @default.
• W2186596722 type Work @default.
• W2186596722 sameAs 2186596722 @default.
• W2186596722 citedByCount "1" @default.
• W2186596722 countsByYear W21865967222023 @default.
• W2186596722 crossrefType "book-chapter" @default.
• W2186596722 hasAuthorship W2186596722A5009084424 @default.
• W2186596722 hasAuthorship W2186596722A5029757311 @default.
• W2186596722 hasAuthorship W2186596722A5033966941 @default.
• W2186596722 hasAuthorship W2186596722A5056576628 @default.
• W2186596722 hasAuthorship W2186596722A5061145610 @default.
• W2186596722 hasAuthorship W2186596722A5066530245 @default.
• W2186596722 hasAuthorship W2186596722A5070034004 @default.
• W2186596722 hasAuthorship W2186596722A5085185765 @default.
• W2186596722 hasConcept C108225325 @default.
• W2186596722 hasConcept C10899652 @default.
• W2186596722 hasConcept C111368507 @default.
• W2186596722 hasConcept C121332964 @default.
• W2186596722 hasConcept C127313418 @default.
• W2186596722 hasConcept C135343436 @default.
• W2186596722 hasConcept C139992725 @default.
• W2186596722 hasConcept C151730666 @default.
• W2186596722 hasConcept C159467904 @default.
• W2186596722 hasConcept C160671074 @default.
• W2186596722 hasConcept C171250308 @default.
• W2186596722 hasConcept C185592680 @default.
• W2186596722 hasConcept C192562407 @default.

• next