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- W2186688446 abstract "(TDDB), associated withsurface contamination andloss of selectivity [10-13]. Thisproblem isespecially forCMOS Leakage anddielectric breakdown ofSiO2arestudied for imager applications, wherethick capping layers arerequired Cuinterconnect structures witheither stand-alone CoWPor [9].A numberofapproaches havebeenusedtominimize two-layer CoWP+SiNcaps.Without apost-CoWP plasmathisproblem, including wetcleaning orplasma cleaning clean, therearemany earlyfails andthedielectric after electroless deposition [10,11], orchemical grafting breakdown exhibits bimodal behavior. Byadding aplasmaprior toelectroless deposition [12]. Intheprevious reports, cleanafter CoWP deposition, theearlyfails canbe adielectric capping layer wasusedinaddition tothemetal eliminated andhighdielectric breakdown isachieved. The capping layer (i.e. two-layer cap).Inthis paper, leakage improvement indielectric breakdown withtheplasma cleancurrent anddielectric breakdown arecompared fora Cu isgreater forthetwo-layer capcompared tothestand-alone wires witheither astand-alone CoWP capping layer ora cap,probably duetotheextra plasma clean associated with two-layer, CoWP+SiNcapping layer. SiNdeposition. Experiment" @default.
- W2186688446 created "2016-06-24" @default.
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- W2186688446 date "2007-01-01" @default.
- W2186688446 modified "2023-09-24" @default.
- W2186688446 title "Effect ofCoWP Capping Layers onDielectric Breakdown ofSiO2" @default.
- W2186688446 hasPublicationYear "2007" @default.
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