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• W2186735599 abstract "We demonstrated a novel, self-aligned gate-stack heterostructure of Ge-quantum dot (QD)/SiO 2 /SiGe-shell on Si with superior interfacial properties in a single step of selective oxidation of a SiGe pillar over a Si 3 N 4 buffer layer on Si substrate. Ge metal-oxide-semiconductor (MOS) capacitors exhibit a quite low interface trap density on the order of 1011 cm−2eV−1, and Ge n-MOSFETs show good turn on and off features with a subthreshld slope of 175 mV/dec and I on /I off > 106." @default.
• W2186735599 created "2016-06-24" @default.
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• W2186735599 date "2014-06-01" @default.
• W2186735599 modified "2023-09-24" @default.
• W2186735599 title "A novel approach to generate self-aligned Ge/SiO<inf>2</inf>/SiGe gate-stacking structures in a single fabrication step" @default.
• W2186735599 cites W2032168709 @default.
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• W2186735599 doi "https://doi.org/10.1109/snw.2014.7348582" @default.
• W2186735599 hasPublicationYear "2014" @default.
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