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- W2187141599 abstract "The electronic passivation of (100) In Ga As- GaAs surface quantum wells (QW's) using in situ deposition of an amorphous, insulating Ga O film has been investigated and compared to standard Al Ga As passivation. Nonradiative lifetimes 1.1 0.2 and 1.2 0.2 ns have been inferred from the dependence of the internal quantum efficiency on optical ex- citation density for the Ga O and Al Ga As passivated In Ga As-GaAs surface QW, respectively. Beyond identical internal quantum efficiency, the amorphous Ga O insulator passivation simplifies device processing, eludes problems arising from lattice-mismatched interfaces, and virtually eliminates band bending in electronic and optoelectronic devices based on a low dimensional system such as quantum wells, wires, and dots." @default.
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- W2187141599 date "1998-01-01" @default.
- W2187141599 modified "2023-09-24" @default.
- W2187141599 title "Insulator Passivation of In Ga As-GaAs Surface Quantum Wells" @default.
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