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• W2187377890 abstract "Abstmct- The shape of the polysilicon region of a polysilicon-emitter transistor fabricated with a single layer of polysilicon depends on the processing conditions and can vary considerably. When the boundary between the polysilicon and the adjacent oxide is not vertical, the anisotropic dopant diffusivity in polysilicon can limit the ability of the dopant to diffuse to the corner, restricting the effectiveness of the polysilicon as a diffusion source in this region. In the extreme case, the junction may be located in the polysilicon, rather than in the underlying single-crystal silicon, causing large leakage currents and degrading the transistor gain. I. INTRODUCTION N ADVANCED bipolar transistors, polysilicon is often I placed over the single-crystal emitter region both to serve as a source of dopant atoms for the single-crystal silicon and to improve the emitter injection efficiency of the transistor. In such structures, the dopant is usually implanted near the surface of the polysilicon and diffused through the polysilicon into the underlying single-crystal silicon. This technique requires that the dopant diffusivity be much higher in polysilicon than in single-crystal silicon so that the dopant diffuses rapidly through the polysilicon and only slightly into the single-crystal silicon to form a very shallow junction. Because of rapid grain-boundary diffusion, the dopant diffusivity in polysilicon can be several orders of magnitude higher than in single-crystal silicon [I], [2], especially in the commonly used polysilicon which has a columnar structure and well-defined grain boundaries. In fabricating polysilicon-emitter transistors which use a single level of polysilicon [3], as shown in Fig. 1, etching and oxidation may form a nonvertical boundary between the polysilicon and the adjacent oxide, as shown in Fig. 2. Selective oxidation of the polysilicon between the emitter and base contact regions is often used to provide electrical isolation. Part of the thickness of the polysilicon may be etched, and the entire thickness of the remaining polysilicon is then oxidized so that the oxide extends into the underlying singlecrystal silicon. This two-dimensional selective oxidation creates a nonvertical sidewall boundary between the polysilicon and the oxide, especially if the oxide grown does not extend an appreciable distance into the underlying single-crystal substrate. If the polysilicon is partially etched before oxidation, a nonvertical etch can accentuate the slope. These operations" @default.
• W2187377890 created "2016-06-24" @default.
• W2187377890 creator A5043291349 @default.
• W2187377890 date "1989-01-01" @default.
• W2187377890 modified "2023-09-27" @default.
• W2187377890 title "Effect of Polysilicon-Emitter Shape on Dopant Diffusion in Polysilicon-Emitter Transistors" @default.
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