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- W2187617886 abstract "The local electric field (the field that distorts, polarizes, and weakens polar molecular bonds in dielectrics) has been investigated for hyper-thin dielectrics. Hyper-thin dielectrics are currently required for advanced semiconductor devices. In the work presented, it is shown that the common practice of using a Lorentz factor of L = 1/3, to describe the local electric field in a dielectric layer, remains valid for hyper-thin dielectrics. However, at the very edge of device structures, a rise in the macroscopic/Maxwell electric field Ediel occurs and this causes a sharp rise in the effective Lorentz factor Leff. At capacitor and transistor edges, Leff is found to increase to a value 2/3 < Leff < 1. The increase in Leff results in a local electric field, at device edge, that is 50%–100% greater than in the bulk of the dielectric. This increase in local electric field serves to weaken polar bonds thus making them more susceptible to breakage by standard Boltzmann and/or current-driven processes. This has important time-dependent dielectric breakdown (TDDB) implications for all electronic devices utilizing polar materials, including GaN devices that suffer from device-edge TDDB." @default.
- W2187617886 created "2016-06-24" @default.
- W2187617886 creator A5046186735 @default.
- W2187617886 date "2015-11-28" @default.
- W2187617886 modified "2023-09-27" @default.
- W2187617886 title "Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics" @default.
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- W2187617886 doi "https://doi.org/10.1063/1.4936271" @default.
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