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- W2187751444 abstract "Highly accurate resistances can be made by iteratively laser inducing diffusion of dopants from the drain and source of a gateless field effect transistor into the channel, thereby forming an electrical link between two adjacent p-n junction diodes. We show that the current-voltage characteristics of these new microdevices are linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. A process model is proposed involving the calculation of the laser melted region in which the dopant diffusion occurs. Experimental results are well described by the proposed model." @default.
- W2187751444 created "2016-06-24" @default.
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- W2187751444 date "2003-01-01" @default.
- W2187751444 modified "2023-09-26" @default.
- W2187751444 title "Laser tuning silicon microdevices for analogue microelectronics" @default.
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- W2187751444 hasPublicationYear "2003" @default.
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