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- W2187849105 abstract "The trade-off between the open circuit voltage and the short circuit current i.f.0. the base resistivity of multicrystalline silicon (Polix) solar cells (4 cm2) is investigated. Very thin substrates (180 pm) with base resistivities between 0.2 R.cm and 2.5 R.cm are used in a laboratory high efficiency process (including Back Surface Field, Hydrogen and oxide passivation, selective and homogeneous emitters) to test the limits, in terms of open circuit voltage and short circuit current, that can be reached on this material. The variation of Voc and Jsc with base doping is established for Polix multicrystalline silicon. On low resistivity substrates (0.2 R.cm) a record value of 636 mV is achieved for the open circuit voltage which largely compensates for the relatively small deficit in Jsc. The efficiencies of solar cells fabricated on the lower resistivity substrates tend to be greater than those achieved on the higher resistivity material." @default.
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- W2187849105 date "1993-01-01" @default.
- W2187849105 modified "2023-09-27" @default.
- W2187849105 title "636 mV OPEN CIRCUIT VOLTAGE MULTICRYSTALLINE SILICON SHORT CIRCUIT CURRENT AND OPEN CIRCUIT VOLTAGE SOLAR CELLS ON POLM MATERIAL: TRADE-OFF BETWEEN" @default.
- W2187849105 hasPublicationYear "1993" @default.
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