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• W2187918340 abstract "We propose a new thin-film transistor (TFT) with a lightly-doped offset built in the polysilicon gate. The offset region of the gate acts as a dielectric in the OFF state and as a conductor in the ON state. The unwelcome peak of the electric field near the drain in the OFF state is significantly reduced, as has been confirmed by two-dimensional device simulation. The key advantage of this device over conventional passive offset structures is that the ON current is not reduced, while the OFF current is suppressed by several orders of magnitude. IN-FILM transistors (TIT'S) are used in static ran- dom access memory (SRAM) technology as pull-up devices in six-transistor complementary MOS cells. In order to reduce the SRAM circuit standby power, it is important to lower the OFF state current of the TIT, which is believed to be caused by field emission at polysili- con grain boundaries in the high-field region near the drain (l). The OFF current is significantly reduced in TIT structures with a drain offset (2) (ungated part of the channel, cf. Fig. Na)), which lowers the peak field in the channel. However, the added series resistance of the ungated channel portion considerably reduces the ON state current, thus degrading the cell stability. It is desir- able to have a device which would have the properties of a drain offset structure in the OFF state, while behaving like a fully gated device in the ON state. This is accomplished in a new thin-film device, the active-gate thin-film transis- tor (AG TFT), proposed in the present work. The key feature of the new structure, shown in Fig. l(b), is the undoped or lightly doped part of the gate which overlays the channel region near the drain; the gate is heavily doped only in the region adjacent to the source. When the device is in the ON state, the lightly doped region is in accumulation and provides the field effect for the channel conductivity. In the OFF state, the lightly doped region is depleted and acts like a drain offset. The main advantage of the AG TFT lies in the fact that the offset built in the gate does not decrease the drain ON current. In the present work, we study the feasibility of the AG TFT by two-dimensional device modeling. We use the AT & T simulator PADRE (31. We consider an upright p-channel TIT with parameters typical for SRAM applications: silicon channel thickness = 400 A, gate oxide thickness = 200 A, gate length = 1 pm, channel length = 0.9 pm, and gate thickness = 1000" @default.
• W2187918340 created "2016-06-24" @default.
• W2187918340 creator A5033077684 @default.
• W2187918340 creator A5035266560 @default.
• W2187918340 creator A5042828839 @default.
• W2187918340 creator A5051734910 @default.
• W2187918340 date "1993-01-01" @default.
• W2187918340 modified "2023-09-24" @default.
• W2187918340 title "Active- Gat e Thin-Film Transis tor" @default.
• W2187918340 cites W1997066788 @default.
• W2187918340 cites W2003883224 @default.
• W2187918340 hasPublicationYear "1993" @default.
• W2187918340 type Work @default.
• W2187918340 sameAs 2187918340 @default.
• W2187918340 citedByCount "0" @default.
• W2187918340 crossrefType "journal-article" @default.
• W2187918340 hasAuthorship W2187918340A5033077684 @default.
• W2187918340 hasAuthorship W2187918340A5035266560 @default.
• W2187918340 hasAuthorship W2187918340A5042828839 @default.
• W2187918340 hasAuthorship W2187918340A5051734910 @default.
• W2187918340 hasConcept C119599485 @default.
• W2187918340 hasConcept C127413603 @default.
• W2187918340 hasConcept C165801399 @default.
• W2187918340 hasConcept C171250308 @default.
• W2187918340 hasConcept C172385210 @default.
• W2187918340 hasConcept C175291020 @default.
• W2187918340 hasConcept C192562407 @default.
• W2187918340 hasConcept C199360897 @default.
• W2187918340 hasConcept C2779227376 @default.
• W2187918340 hasConcept C41008148 @default.
• W2187918340 hasConcept C49040817 @default.
• W2187918340 hasConcept C68043766 @default.
• W2187918340 hasConcept C7140552 @default.
• W2187918340 hasConcept C87359718 @default.
• W2187918340 hasConceptScore W2187918340C119599485 @default.
• W2187918340 hasConceptScore W2187918340C127413603 @default.
• W2187918340 hasConceptScore W2187918340C165801399 @default.
• W2187918340 hasConceptScore W2187918340C171250308 @default.
• W2187918340 hasConceptScore W2187918340C172385210 @default.
• W2187918340 hasConceptScore W2187918340C175291020 @default.
• W2187918340 hasConceptScore W2187918340C192562407 @default.
• W2187918340 hasConceptScore W2187918340C199360897 @default.
• W2187918340 hasConceptScore W2187918340C2779227376 @default.
• W2187918340 hasConceptScore W2187918340C41008148 @default.
• W2187918340 hasConceptScore W2187918340C49040817 @default.
• W2187918340 hasConceptScore W2187918340C68043766 @default.
• W2187918340 hasConceptScore W2187918340C7140552 @default.
• W2187918340 hasConceptScore W2187918340C87359718 @default.
• W2187918340 hasLocation W21879183401 @default.
• W2187918340 hasOpenAccess W2187918340 @default.
• W2187918340 hasPrimaryLocation W21879183401 @default.
• W2187918340 hasRelatedWork W1816617408 @default.
• W2187918340 hasRelatedWork W1967842461 @default.
• W2187918340 hasRelatedWork W2026835407 @default.
• W2187918340 hasRelatedWork W2736611398 @default.
• W2187918340 hasRelatedWork W2897035604 @default.
• W2187918340 hasRelatedWork W2908275775 @default.
• W2187918340 hasRelatedWork W2930700230 @default.
• W2187918340 hasRelatedWork W2271121627 @default.
• W2187918340 hasRelatedWork W2283322357 @default.
• W2187918340 hasRelatedWork W2404624503 @default.
• W2187918340 hasRelatedWork W2415455545 @default.
• W2187918340 hasRelatedWork W2520261669 @default.
• W2187918340 hasRelatedWork W2599732222 @default.
• W2187918340 hasRelatedWork W2812459969 @default.
• W2187918340 hasRelatedWork W2818877591 @default.
• W2187918340 hasRelatedWork W2821352565 @default.
• W2187918340 hasRelatedWork W2821400965 @default.
• W2187918340 hasRelatedWork W2927258521 @default.
• W2187918340 hasRelatedWork W3040327234 @default.
• W2187918340 hasRelatedWork W3146788402 @default.
• W2187918340 isParatext "false" @default.
• W2187918340 isRetracted "false" @default.
• W2187918340 magId "2187918340" @default.
• W2187918340 workType "article" @default.