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- W2188260319 abstract "Ferroelectric thinfilms ofSrBi2Ta209 current density, andlowdielectric loss (11)-(13). (SBT) or bilayeredSrBi2Ta2O9/Ba(Zro.1TiO.9)03 Fora metal/ferroelectric/semiconductor (MFS) (SBT/BZT) aresuccessfully deposited onSisubstrate structure, theunwanted silicon oxidelayer andthe undertheoptimal RFmagnetron sputtering conditions, interfacial layer canbeformed between theferroelectric andtheir electrical andferroelectric characteristics are thinfilmandsubstrate astheferroelectric thinfilmis discussed. The memorywindow,capacitance and deposited on the semiconductor substrate. The leakage current density ofMFS structures under ferroelectric properties ofMFSstructures, degraded bythe different oxygen concentrations arealsoreported. The lowdielectric silicon oxide layer andinterfacial layer, can memorywindowofbilayered SBT/BZTstructure beimproved byinserting ahighdielectric buffer layer showslarger thanoneofsingle layer SBTstructure. (14)-(15). Although thethin films ofSBTandBZThave Besides, thebilayered SBT/BZTstructure exhibits a beenwidely researched, there isnoreport aboutthe ferroelectric behavior witharemanent polarization of ferroelectric properties ofbilayered SBT/BZTfilms on 8 PC/cm2 andacoercive field ofand130kV/cm. MFS structure yet. Inthis study, theSBTandBZTthin films deposited onSisubstrates using RF magnetron I.INTRODUCTION sputtering will bepresented. We also propose anovel bilayered structure, whichcombines SBTwith BZTlayer, Ferroelectric thinfilms havebeenextensively bytaking advantage ofthesuperior electric properties of investigated fornonvolatile memoryapplication, becausetheSBTandBZT layer. Theelectrical properties of ferroelectric random access memories (FeRAMs) havethe Al/SBT/BZT/Si MFS structures areinvestigated in characteristics oflowerwriting voltage, faster writingcomparison withthoseofAl/SBT/Si MFS ones.The speedandbetter endurance (1). Amongferroelectric ferroelectric properties ofMFSarefurther improved using materials, Pb(Zr,Ti)03 (PZT) isanimportant material for thebilayered SBT/BZTdesign. ferroelectric memorydevices because ofhighremanent polarization andlow-temperature crystallization, whereas" @default.
- W2188260319 created "2016-06-24" @default.
- W2188260319 creator A5026786721 @default.
- W2188260319 creator A5029235815 @default.
- W2188260319 creator A5071826480 @default.
- W2188260319 date "2007-01-01" @default.
- W2188260319 modified "2023-09-24" @default.
- W2188260319 title "Electrical Properties ofBilayer SrBi2Ta2O9/ Ba(Zro.Tio.9)03 ThinFilms forFerroelectric Random Access MemoryApplications" @default.
- W2188260319 cites W2869184352 @default.
- W2188260319 hasPublicationYear "2007" @default.
- W2188260319 type Work @default.
- W2188260319 sameAs 2188260319 @default.
- W2188260319 citedByCount "0" @default.
- W2188260319 crossrefType "journal-article" @default.
- W2188260319 hasAuthorship W2188260319A5026786721 @default.
- W2188260319 hasAuthorship W2188260319A5029235815 @default.
- W2188260319 hasAuthorship W2188260319A5071826480 @default.
- W2188260319 hasConcept C111368507 @default.
- W2188260319 hasConcept C127313418 @default.
- W2188260319 hasConcept C133386390 @default.
- W2188260319 hasConcept C147789679 @default.
- W2188260319 hasConcept C159985019 @default.
- W2188260319 hasConcept C171250308 @default.
- W2188260319 hasConcept C185592680 @default.
- W2188260319 hasConcept C19067145 @default.
- W2188260319 hasConcept C192562407 @default.
- W2188260319 hasConcept C205049153 @default.
- W2188260319 hasConcept C22423302 @default.
- W2188260319 hasConcept C2777289219 @default.
- W2188260319 hasConcept C2779227376 @default.
- W2188260319 hasConcept C49040817 @default.
- W2188260319 hasConcept C544956773 @default.
- W2188260319 hasConcept C61427134 @default.
- W2188260319 hasConcept C79090758 @default.
- W2188260319 hasConceptScore W2188260319C111368507 @default.
- W2188260319 hasConceptScore W2188260319C127313418 @default.
- W2188260319 hasConceptScore W2188260319C133386390 @default.
- W2188260319 hasConceptScore W2188260319C147789679 @default.
- W2188260319 hasConceptScore W2188260319C159985019 @default.
- W2188260319 hasConceptScore W2188260319C171250308 @default.
- W2188260319 hasConceptScore W2188260319C185592680 @default.
- W2188260319 hasConceptScore W2188260319C19067145 @default.
- W2188260319 hasConceptScore W2188260319C192562407 @default.
- W2188260319 hasConceptScore W2188260319C205049153 @default.
- W2188260319 hasConceptScore W2188260319C22423302 @default.
- W2188260319 hasConceptScore W2188260319C2777289219 @default.
- W2188260319 hasConceptScore W2188260319C2779227376 @default.
- W2188260319 hasConceptScore W2188260319C49040817 @default.
- W2188260319 hasConceptScore W2188260319C544956773 @default.
- W2188260319 hasConceptScore W2188260319C61427134 @default.
- W2188260319 hasConceptScore W2188260319C79090758 @default.
- W2188260319 hasLocation W21882603191 @default.
- W2188260319 hasOpenAccess W2188260319 @default.
- W2188260319 hasPrimaryLocation W21882603191 @default.
- W2188260319 hasRelatedWork W1496217022 @default.
- W2188260319 hasRelatedWork W1655301082 @default.
- W2188260319 hasRelatedWork W1834758522 @default.
- W2188260319 hasRelatedWork W2018831049 @default.
- W2188260319 hasRelatedWork W2025902819 @default.
- W2188260319 hasRelatedWork W2030023680 @default.
- W2188260319 hasRelatedWork W2074971759 @default.
- W2188260319 hasRelatedWork W2077466661 @default.
- W2188260319 hasRelatedWork W2084514146 @default.
- W2188260319 hasRelatedWork W2097926140 @default.
- W2188260319 hasRelatedWork W2111737289 @default.
- W2188260319 hasRelatedWork W2127435407 @default.
- W2188260319 hasRelatedWork W2128742081 @default.
- W2188260319 hasRelatedWork W2259695369 @default.
- W2188260319 hasRelatedWork W2327155873 @default.
- W2188260319 hasRelatedWork W2483605251 @default.
- W2188260319 hasRelatedWork W2534198676 @default.
- W2188260319 hasRelatedWork W2547834939 @default.
- W2188260319 hasRelatedWork W2993777985 @default.
- W2188260319 hasRelatedWork W3082743909 @default.
- W2188260319 isParatext "false" @default.
- W2188260319 isRetracted "false" @default.
- W2188260319 magId "2188260319" @default.
- W2188260319 workType "article" @default.