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- W218874983 abstract "InGaAs quantum rings (QRs) were fabricated on GaAs substrates by droplet epitaxy using molecular‐beam epitaxy (MBE). The growth process starts by depositing 3 ML InxGa1−x at 150 °C (0.3≤x≤0.7) on GaAs to form droplets and annealing in As4 at 180 °C. The effects of Indium‐mole‐fraction (x) on the structural properties (size and density) of InGaAs QRs were investigated. QRs can be classified into 2 groups, highly dense tiny‐size QRs and lowly dense normal‐size QRs. For x = 0.3–0.4 (high‐Ga‐content), the samples are full of highly dense tiny‐QRs. However, with increasing x to 0.5–0.7 (high‐In‐content), the tiny‐size QRs were suppressed, leaving only normal‐size QRs existed." @default.
- W218874983 created "2016-06-24" @default.
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- W218874983 date "2011-01-01" @default.
- W218874983 modified "2023-10-12" @default.
- W218874983 title "In[sub x]Ga[sub 1−x]As∕GaAs Quantum Rings Grown by Droplet Epitaxy" @default.
- W218874983 doi "https://doi.org/10.1063/1.3666337" @default.
- W218874983 hasPublicationYear "2011" @default.
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