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- W2188804807 abstract "A comprehensive study of emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistors (HBTs) has been undertaken. It is shown that the recombination rate and electron densities are drastically increased near the exposed base surface between the base contact and the emitter ledge. In contrast, the corresponding hole densities are decreased. If the emitter ledge is too thick, current will flow through the un- depleted ledge, which increases the emitter-size effect. In con- trast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of the emit- ter ledge is a crucial issue and should be carefully consid- ered. It is shown that, from simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is 100-200 A." @default.
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- W2188804807 date "2006-01-01" @default.
- W2188804807 modified "2023-10-18" @default.
- W2188804807 title "Comprehensive Study of Emitter-Ledge Thickness of" @default.
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