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- W2188814171 abstract "An analytical draincurrent modelofa noveldevice architecture- AlGaN/GaNMetalInsulator Semiconductor Heterostructure FieldEffect Transistor (MISHFET)hasbeen presented toassess themicrowave performance ofthedevice for submicrongatelengths. Themodelhasabroadutility asitis equally applicable toHFETsaswell. Boththestructures have beenextensively studied anda comparison ismadebetween them.Theproposed modeliscapable ofmodeling electrical characteristics like sheet carrier density, threshold voltage, drain current, cut-off frequency, etc.The MISHFET showsa considerable 36% increase indrainsaturation current. The results obtained arecompared withexperimental data& show excellent agreement." @default.
- W2188814171 created "2016-06-24" @default.
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- W2188814171 date "2007-01-01" @default.
- W2188814171 modified "2023-09-27" @default.
- W2188814171 title "An Analytical Drain Current Model for AlGaN/GaN MetalInsulator Semiconductor Heterostructure FieldEffect Transistor" @default.
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- W2188814171 hasPublicationYear "2007" @default.
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