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• W2189043944 abstract "A new concept for full-wafer processing and test- ing for semiconductor laser fabrication in the AIGaAs-GaAs material system will be presented. The approach is based on chemically assisted ion beam etching for the laser-mirror for- mation. The technique routinely provides excellent mirror quality with mirror roughness of less than 200 A, resulting in mirror reflectivities of about 30% and scattering losses of less than 2%. Lasers with two etched mirrors have been fabricated that show equivalent output powerlcurrent (P/I) characteris- tics to lasers on the same wafer with both mirrors cleaved, up to more than 40 mW (CW) for uncoated mirrors. Single-mode operation exceeding 50 mW output power has been achieved for an SQW-GRINSCH ridge laser structure with coated, etched mirrors. Furthermore, the etching technique has been used to fabri- cate special devices and structures for on-wafer parametric laser and beam property characterization. This new approach to full-wafer testing allows efficient on-wafer functional testing of a large number of lasers on a 2-in wafer, with considerable improvement in testing throughput. The concept also incorpo- rates many test sites for process characterization which provide important feedback for process improvement/optimization. In addition to the above advantages of full-wafer processing and testing, the availability of high-quality etched mirrors will pro- vide the potential for lasers with specially shaped mirrors, and will open up new opportunities for opto-electronic integration. The approach described has been developed for lasers to be used in optical storage at wavelengths of 830 and 856 nm. How- ever, the basic concept can be applied to semiconductor laser fabrication in any other material system and wavelength range. The major difference will be the adaptation of the mirror-etch- ing process to the composition of the material." @default.
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• W2189043944 date "1991-01-01" @default.
• W2189043944 modified "2023-10-17" @default.
• W2189043944 title "Special Issue Papers Full-Wafer Technology-A New Approach to Large-scale Laser Fabrication and Integration" @default.
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