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- W2189076998 abstract "Modeling of the intrinsic capacitances of short-channel, nanoscale DG and GAA MOSFETs is presented, covering a wide range of operation from subthreshold to strong inversion. In subthreshold, the electrostatics is dominated by the inter-electrode capacitive coupling, from which analytical expressions for the charge conserving trans- and self-capacitances of the DG device can readily be derived. Near and above threshold, the influence of the electronic charge is taken into account in a precise, self-consistent manner by combining suitable model expressions with Poisson’s equation in the device body. The models are verified by comparison with numerical device simulations." @default.
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- W2189076998 date "2008-06-01" @default.
- W2189076998 modified "2023-09-27" @default.
- W2189076998 title "Capacitance modeling of Short-Channel DG and GAA MOSFETs" @default.
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