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- W2189133670 abstract "Received 1 April 2007; Accepted 26 June 2007Recommended by Armin G. AberleWe report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The workreported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quan-tumdotsandtoutilizethisincompletethin-filmsilicon-basedtandemcell,withouttheconstraintsoflatticematching,butwhichnonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dis-persed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactivesputteringorPECVD.BandgapopeningofSiQDsinnitrideismoreblue-shiftedthanthatofSiQDinoxide,whileclearevidenceofquantumconfinementinSiquantumdotsincarbidewashardtoobtain,probablyduetomanysurfaceanddefectstates.ThePLdecay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4nm dot with increasing detection wavelength.Copyright © 2007 Eun-Chel Cho et al.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense,which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited." @default.
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- W2189133670 date "2007-01-01" @default.
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- W2189133670 title "ResearchArticle Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells" @default.
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