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- W2189246604 abstract "Thispaper presents anewlow-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using astress-optimised PECVD SiCasthecapping andsealing material, imparting harshenvironment capability. This technique hasbeenapplied forthefabrication and encapsulation ofawidevariety ofsurface- andthin-SOI microstructures thatincluded microcavities, RF switches andvarious accelerometers. Advantages ofourtechnique areitsversatility, smaller footprint, reduced chipthickness andprocess complexity, post-CMOSbatchprocessing capability andaddedfunctionality duetothepossibility of integrating additional electrodes forMEMS. Besides fabrication details, this workalsodiscusses related design aspects forlarge-area MEMS anddemonstrates the encapsulation results. Successfully encapsulation ofdevice geometries aslarge as955x827.m2 hasbeenachieved." @default.
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- W2189246604 date "2009-01-01" @default.
- W2189246604 modified "2023-09-26" @default.
- W2189246604 title "ROBUSTWAFER-LEVELTHIN-FILMENCAPSULATIONOF MICROSTRUCTURESUSINGLOW STRESSPECVDSILICONCARBIDE" @default.
- W2189246604 hasPublicationYear "2009" @default.
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