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- W2189488506 abstract "The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 10 8 cm 2 to 5 × 10 10 cm 2 . Current and capacitance measurements revealed the effect of radiation defects induced in the bulk of Si and at the a-Si:H/c-Si interface upon the electrophysical properties of the structures. On increasing the dose of irradiation the contribution of generation-recombination current from the amorphous part of silicon was growing. An increase in the density of interface traps and their electrical activity were observed in temperature dependent capacitance measurements in a wide frequency range of the measuring signal. K e y w o r d s: Silicon HIT solar cell, amorphous-crystalline silicon heterostructure, heterojunction with intrinsic thinlayer, high-energy heavy ions irradiation, radiation hardness" @default.
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- W2189488506 date "2014-01-01" @default.
- W2189488506 modified "2023-09-27" @default.
- W2189488506 title "ELECTRICAL PROPERTIES OF SOLAR CELLS WITH A HETEROJUNCTION OF AMORPHOUS AND CRYSTALLINE SILICON IRRADIATED BY HEAVY XENON IONS" @default.
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