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• W2190406558 abstract "Al x Ga 1 − x As GaAs heterostructures have been grown by two different liquid phase epitaxy (LPE) modes, i.e. the supercooled and melt-etch methods, for the fabrication of highly efficient solar cells. Typical structural characteristics observed under a transmission electron microscope (TEM), an Auger energy spectrometer (AES) and corresponding device parameters were presented. The results indicated that the P + PNN + configuration grown by the melt-etch method could be used to produce high performance, large area solar cells with effectively reducing the defects of the substrate and improving the minority carrier collection by forming a compositionally graded region in the window layer." @default.
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• W2190406558 date "1996-04-01" @default.
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• W2190406558 title "Structure and device characteristics of solar cells" @default.
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• W2190406558 doi "https://doi.org/10.1016/0022-0248(95)00948-5" @default.
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